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• W1994481058 abstract "Large area p–i–n amorphous silicon-carbon heterojunctions with low conductivity and wide band gap doped layers were produced by plasma enhanced chemical vapor deposition at low temperature. Carrier transport and collection efficiency are investigated from dark and illuminated current–voltage dependence and spectral response measurements under different electrical and optical bias conditions. The results show that it is possible to control the absorption at a given wavelength and thus to tune the spectral sensitivity by changing the electrical bias around the open circuit voltage. A numerical simulation gives insight into the physical process and explains the bias controlled spectral sensitivity presented by the devices." @default.
• W1994481058 created "2016-06-24" @default.
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• W1994481058 date "2003-03-01" @default.
• W1994481058 modified "2023-09-25" @default.
• W1994481058 title "Bias controlled spectral sensitivity in a-SiC:H p–i–n devices" @default.
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• W1994481058 doi "https://doi.org/10.1016/s0040-6090(02)01226-9" @default.
• W1994481058 hasPublicationYear "2003" @default.
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