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- W1994501230 abstract "Threading dislocations continue to challenge the functionality and reliability of GaN based devices. This work investigates the selective etching of threading dislocations in a GaN template grown by metalorganic chemical vapor deposition (MOCVD), and subsequent regrowth as a method to reduce the dislocation density. A 2.0 µm template layer was grown first, followed by either 2 second or 30 second etching of the GaN in KOH, followed by regrowth of 2 µm of GaN and 0.2 µm of p-type GaN. Atomic force microscopy (AFM) images showed that hexagonal pits were opened up by the KOH etch. Deep level transient spectroscopy (DLTS) measurements showed several traps present, including a dominant electron trap at 0.585 eV, with capture cross section of 1.0 × 10–15 cm2 and concentration of 1016/cm3. Another electron trap was also measured in the same range (0.536 eV, 5.7 × 10–16 cm2) with an order of magnitude lower concentration. From the DLTS measurements, the KOH dislocation etching did not significantly reduce the concentration of defects, or eliminate any specific traps. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W1994501230 date "2005-03-30" @default.
- W1994501230 modified "2023-10-10" @default.
- W1994501230 title "Deep levels in KOH etched and MOCVD regrown GaN p-n junctions" @default.
- W1994501230 doi "https://doi.org/10.1002/pssc.200461507" @default.
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