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- W1994529503 abstract "Amorphous silicon films are prepared by rf sputtering in neon plasma. Doping effects of group-III elements in unhydrogenated a-Si are studied. The doping efficiency is found to be sensitive to preparation conditions, such as sputtering-gas pressure, target-substrate distance, self-bias voltage on the target, and substrate temperature. The results indicate that a low density-of-states a-Si could be produced by optimising the preparation conditions.Mittels HF-Sputtern im Neon-Plasma werden amorphe Siliziumschichten hergestellt. Dabei werden Dotierungseinflusse der Elemente der III. Gruppe im nichthydrierten a-Si untersucht. Es wird gefunden, das die Dotierungseffizienz gegenuber Praparationsbedingungen, wie Sputter-Gasdruck, Target-Substrat-abstand, Vorspannung des Target und Substrattemperatur, empfindlich ist. Die Ergebnisse zeigen, das sich a-Si mit niedriger Zustandsdichte durch Optimieren der Praparationsbedingungen herstellen last." @default.
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- W1994529503 date "1987-08-16" @default.
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- W1994529503 title "Dependence of p-Type Doping Efficiency in a-Si on Preparation Conditions" @default.
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- W1994529503 doi "https://doi.org/10.1002/pssa.2211020231" @default.
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