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• W1994549061 abstract "The activation mechanism in phosphorous implanted silicon under excimer laser irradiation is investigated. The activation efficiency in the solid phase has been measured in a wide range of irradiation conditions, tuning the laser fluence in the sub-, partial, and total melting regime. Moreover, fixing the fluence, the activation as a function of the shot number has been analyzed. The total active fraction varies by several orders of magnitude and shows a complex trend depending on the process conditions. Our model, based on the interaction between defects and the active/inactive impurities, explains this scenario. In particular, it predicts experimental P active profiles, thus demonstrating that the status of the defect system rules the activation phenomenon, where the coupling between dopant and defect clusters at the early irradiation stage plays a crucial role." @default.
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• W1994549061 date "2011-06-01" @default.
• W1994549061 modified "2023-09-27" @default.
• W1994549061 title "Solid phase phosphorous activation in implanted silicon by excimer laser irradiation" @default.
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• W1994549061 doi "https://doi.org/10.1063/1.3592262" @default.
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