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• W1994573449 abstract "The initial stages of growth of CdTe on (001) GaAs have been studied using Auger electron spectroscopy and reflection high-energy electron techniques. At the growth temperature of 225 °C tellurium atoms are observed to be adsorbed to a thickness of one to two monolayers on a thermally cleaned GaAs substrate. However, cadmium atoms are adsorbed only when tellurium atoms are present. An analysis of the Auger electron spectra and the reflection high-energy electron diffraction patterns taken at intervals during the initial growth of CdTe films from a CdTe compound source indicates that growth takes place first by the deposition of one to two monolayers of tellurium. This is followed by the nucleation and growth of CdTe crystallites which increase in size and coalesce to form a single crystal of CdTe with a (111) CdTe ∥ (001) GaAs orientation." @default.
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• W1994573449 date "1984-05-01" @default.
• W1994573449 modified "2023-09-25" @default.
• W1994573449 title "Study of the initial stages of growth of CdTe on (001)GaAs" @default.
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• W1994573449 doi "https://doi.org/10.1063/1.94927" @default.
• W1994573449 hasPublicationYear "1984" @default.
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