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- W1994610453 abstract "Low resistivity a-Si1 − xCx:H alloy films have been formed by high dose Co+ ion implantation. The influence of the carbon content of the films on the resistivity has been studied and the lowest values, of the order of 10 Ω/Sq, have been observed for the carbon free films. Even lower resistivities, a further reduction of up to 50%, have resulted from annealing at temperatures up to 500°C. Changes in the optical and structural properties of the implanted a-Si1 − xCx:H films have been studied by means of IR and Raman spectroscopy. Results show that the implantation produces considerable structural and chemical modifications. The formation of, and the transition to, a possible CoSi2 phase has been observed by examining the IR and Raman spectra as a function of implant dose." @default.
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- W1994610453 date "2000-04-01" @default.
- W1994610453 modified "2023-09-27" @default.
- W1994610453 title "Electrical and optical properties of Co+ ion implanted a-Si1−xCx:H alloys" @default.
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- W1994610453 doi "https://doi.org/10.1016/s0168-583x(99)00630-8" @default.
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