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- W1994648136 abstract "A new method of isolating adjacent DRAM capacitors is presented and characterized. This method increases the capacitor area available for charge storage by 39% over conventional semi-recessed field isolation. Hi-C isolation has been used to make high performance 64K DRAM's which exhibit acceptable refresh properties up to 125°C." @default.
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- W1994648136 date "1982-01-01" @default.
- W1994648136 modified "2023-09-26" @default.
- W1994648136 title "Hi-C isolation of DRAM storage capacitors" @default.
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- W1994648136 doi "https://doi.org/10.1109/iedm.1982.190367" @default.
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