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- W1994667404 abstract "In this paper, we discusse the advantages of thinning the channel on short-channel effects for lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with sub-0.1-µm-long gates with regard to the performance of a 0.05-µm-gate device. To fabricate a sub-0.1-µm gate, the opening shape of the gate-footprint is controlled by using a bilayer dielectric film system and RIE side etching. The device shows a current gain cutoff frequency of 300 GHz and g m / g d ratio of 15. Thinning the channel and the barrier down to 100 Å improves carrier confinement and subthreshold characteristics and is indispensable for reducing the short-channel effects in the sub-0.1-µm-gate-length region." @default.
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- W1994667404 title "0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects" @default.
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- W1994667404 doi "https://doi.org/10.1143/jjap.33.798" @default.
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