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- W1994711739 abstract "A general theory of the kinetics of radiation-induced defect accumulation and recombination in solids and liquids limited by spatial correlations of Frenkel defects is presented and developed. Kinetic equations are solved making use of the superposition approximation. For the first time a correlation of the similar defects is taken into account, which arises indirectly due to dissimilar defect recombination. A radiation-induced accumulation of immobile defects proves clearly a formation of loose aggregates of the similar defects. It is shown that a defect concentration grows with time t proportionally to 1 — exp (-2μ0vat), μμ0 is the rate of defect production per unit volume and time, va being an annihilation volume. The less the initial defect correlation is in genetic (Frenkel) pairs, the greater is the defect concentration under saturation at high doses. Es wird eine allgemeine Theorie der Erzeugungs- und Rekombinationskinetik von Frenkeldefekten vorgeschlagen und entwickelt, die die Abstandskorrelation von unbeweglichen sowie beweglichen Defekten berücksichtigt. Die kinetischen Gleichungen werden in der Superpositionsnäherung gelöst, in der zum ersten Mal die Korrelation zwischen gleichartigen Defekten, die mittelbar durch Rekombination zum Vorschein kommt, nicht vernachlässigt wird. Es wird die Entstehung von porösen Clustern von gleichartigen Defekten bei Bestrahlung bewiesen. Es wird gezeigt, daß die Defektdichte mit der Zeit t proportional 1 — exp (— 2μ0vat) wächst, wo μ0 die Produktionsrate der Erzeugung der Defekte und va das Annihilationsvolumen sind. Die Sättigungsdichte ist um so kleiner, je stärker die Abstandkorrelation des Frenkelpaares bei Erzeugung ist." @default.
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- W1994711739 date "1981-06-01" @default.
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- W1994711739 title "Kinetics of Defect Accumulation and Recombination. I. General Formalism" @default.
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- W1994711739 doi "https://doi.org/10.1002/pssb.2221050241" @default.
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