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- W1994756114 abstract "Selective embedded growth of the InGaAs/InP double heterostructure in a planar fashion was successfully demonstrated by chemical beam epitaxy (CBE). Channels of 5 to 7 μm wide were formed by wet etching on the InP substrate, giving sidewalls of semiconductor. Layers of InP and InGaAs/InP heterostructures were grown on this patterned substrate at a growth temperature of 525°C. The epitaxial layer has facets that depend on the window orientation of the SiO2 mask with respect to the crystal axis. The morphology of the selectively grown material in the channeled stripe along the [011] direction was very smooth." @default.
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- W1994756114 date "1992-12-01" @default.
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- W1994756114 title "Selective embedded growth of InGaAs/InP double-heterostructures by chemical beam epitaxy" @default.
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- W1994756114 doi "https://doi.org/10.1016/0022-0248(92)90290-y" @default.
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