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- W1994795536 abstract "Abstract The total polarization fields of pseudomorphic In x Ga 1− x N/GaN and Al x Ga 1− x N/GaN heterostructures with 0 ≤ x ≤ 0.4 have been calculated as a function of the crystal orientation. Especial attention is placed on the direction and magnitude of in‐plane piezoelectric polarization, which is not negligible for the non‐polar and semi‐polar growth. For an arbitrary crystal orientation, the piezoelectric polarization prevails in the InGaN/GaN system while the spontaneous polarization prevails in the AlGaN/GaN system. The in‐plane potential due to polarization fields in non‐polar epilayers is found to depend on the degree of planarity of the heterojunctions, and on the respective lateral dimensions." @default.
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- W1994795536 date "2010-06-09" @default.
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- W1994795536 title "In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation" @default.
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- W1994795536 doi "https://doi.org/10.1002/pssa.200925632" @default.
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