Matches in SemOpenAlex for { <https://semopenalex.org/work/W1994808580> ?p ?o ?g. }
Showing items 1 to 84 of
84
with 100 items per page.
- W1994808580 endingPage "2032" @default.
- W1994808580 startingPage "2030" @default.
- W1994808580 abstract "Abstract AlN/GaN‐based high electron mobility transistors with ultra‐thin AlN barriers of 2.3 ‐ 5 nm are attractive candidates for very high speed applications owing to the aggressive scalability such structures afford. We report the first study on formation of ohmic contacts to these high quality ultra‐thin channel heterostructures (n s > 1x10 13 cm –2 and μ > 900 cm 2 /Vs) with systematically varying barrier thicknesses. While the conventional ohmic contacts to AlGaN/GaN structures generally require high temperature annealing, these ohmic contacts were found to behave ohmic or near ohmic as‐deposited. Annealing (400‐860 0 C) improves the contact resistance to a range of 0.8 ‐ 2 ohm‐mm but the annealing conditions strongly depend on the AlN thickness as well as the heterostructure quality (μ). All alloyed contacts show smooth morphology, making them suitable for e‐beam lithographically defined gate patterning. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
- W1994808580 created "2016-06-24" @default.
- W1994808580 creator A5016075331 @default.
- W1994808580 creator A5024765099 @default.
- W1994808580 creator A5025634398 @default.
- W1994808580 creator A5064832078 @default.
- W1994808580 creator A5084064432 @default.
- W1994808580 date "2008-05-01" @default.
- W1994808580 modified "2023-10-06" @default.
- W1994808580 title "Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs" @default.
- W1994808580 cites W2002080457 @default.
- W1994808580 cites W2022567394 @default.
- W1994808580 cites W2023144513 @default.
- W1994808580 cites W2044426106 @default.
- W1994808580 cites W2063233334 @default.
- W1994808580 cites W2111795186 @default.
- W1994808580 cites W2135153000 @default.
- W1994808580 cites W2156906264 @default.
- W1994808580 doi "https://doi.org/10.1002/pssc.200778724" @default.
- W1994808580 hasPublicationYear "2008" @default.
- W1994808580 type Work @default.
- W1994808580 sameAs 1994808580 @default.
- W1994808580 citedByCount "19" @default.
- W1994808580 countsByYear W19948085802012 @default.
- W1994808580 countsByYear W19948085802014 @default.
- W1994808580 countsByYear W19948085802017 @default.
- W1994808580 countsByYear W19948085802019 @default.
- W1994808580 countsByYear W19948085802020 @default.
- W1994808580 countsByYear W19948085802022 @default.
- W1994808580 crossrefType "journal-article" @default.
- W1994808580 hasAuthorship W1994808580A5016075331 @default.
- W1994808580 hasAuthorship W1994808580A5024765099 @default.
- W1994808580 hasAuthorship W1994808580A5025634398 @default.
- W1994808580 hasAuthorship W1994808580A5064832078 @default.
- W1994808580 hasAuthorship W1994808580A5084064432 @default.
- W1994808580 hasConcept C119599485 @default.
- W1994808580 hasConcept C123671423 @default.
- W1994808580 hasConcept C127413603 @default.
- W1994808580 hasConcept C138230450 @default.
- W1994808580 hasConcept C165801399 @default.
- W1994808580 hasConcept C171250308 @default.
- W1994808580 hasConcept C172385210 @default.
- W1994808580 hasConcept C19067145 @default.
- W1994808580 hasConcept C191897082 @default.
- W1994808580 hasConcept C192562407 @default.
- W1994808580 hasConcept C2777855556 @default.
- W1994808580 hasConcept C2779227376 @default.
- W1994808580 hasConcept C49040817 @default.
- W1994808580 hasConcept C79794668 @default.
- W1994808580 hasConceptScore W1994808580C119599485 @default.
- W1994808580 hasConceptScore W1994808580C123671423 @default.
- W1994808580 hasConceptScore W1994808580C127413603 @default.
- W1994808580 hasConceptScore W1994808580C138230450 @default.
- W1994808580 hasConceptScore W1994808580C165801399 @default.
- W1994808580 hasConceptScore W1994808580C171250308 @default.
- W1994808580 hasConceptScore W1994808580C172385210 @default.
- W1994808580 hasConceptScore W1994808580C19067145 @default.
- W1994808580 hasConceptScore W1994808580C191897082 @default.
- W1994808580 hasConceptScore W1994808580C192562407 @default.
- W1994808580 hasConceptScore W1994808580C2777855556 @default.
- W1994808580 hasConceptScore W1994808580C2779227376 @default.
- W1994808580 hasConceptScore W1994808580C49040817 @default.
- W1994808580 hasConceptScore W1994808580C79794668 @default.
- W1994808580 hasIssue "6" @default.
- W1994808580 hasLocation W19948085801 @default.
- W1994808580 hasOpenAccess W1994808580 @default.
- W1994808580 hasPrimaryLocation W19948085801 @default.
- W1994808580 hasRelatedWork W1617728834 @default.
- W1994808580 hasRelatedWork W1835526743 @default.
- W1994808580 hasRelatedWork W1971827964 @default.
- W1994808580 hasRelatedWork W1991671539 @default.
- W1994808580 hasRelatedWork W2078011656 @default.
- W1994808580 hasRelatedWork W2126473095 @default.
- W1994808580 hasRelatedWork W2752947955 @default.
- W1994808580 hasRelatedWork W2755338716 @default.
- W1994808580 hasRelatedWork W2766347592 @default.
- W1994808580 hasRelatedWork W2794037016 @default.
- W1994808580 hasVolume "5" @default.
- W1994808580 isParatext "false" @default.
- W1994808580 isRetracted "false" @default.
- W1994808580 magId "1994808580" @default.
- W1994808580 workType "article" @default.