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• W1994882979 abstract "Transient microwave reflectance (TMWR) has been used to investigate the n+-n-p HgCdTe structures formed by B+ implantation and moderate annealing. Vacancy-doped p-type bulk HgCdTe (x∼0.285) crystals were used in this work. 130 keV B+ ions were implanted at a dose of 1×1014 cm−2. Samples were successively thinned through etching in 0.5% Br2 in CH3OH solutions with a standardized procedure for differential Hall/resistivity measurements. At every differential etch step, the TMWR signal was also recorded and theoretically analyzed for estimating bulk lifetime and surface recombination velocity. Results for as-implanted as well as moderately annealed samples have been presented. The study indicated the usefulness of TMWR analysis in evaluating implant anneal process for the formation of n+-n-p HgCdTe structures for photodetector fabrication." @default.
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• W1994882979 date "2009-09-01" @default.
• W1994882979 modified "2023-09-27" @default.
• W1994882979 title "Evaluation of B+-implanted n+-n-p HgCdTe structures using transient microwave reflectance" @default.
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• W1994882979 doi "https://doi.org/10.1063/1.3204470" @default.
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