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- W1994886795 abstract "The dilute nitrides like (GaIn)(NAs) or Ga(NAsSb) are attractive materials for the next generation of photovoltaic cells with four to six active junctions. Unfortunately, these compounds suffer from a low minority carrier diffusion length. This can be partially compensated by choosing suitable device structures with a reduced prerequisite on the necessary current density. (GaIn)(NAs) solar cells with a bandgap between 1.0 and 1.2 eV have been grown by metal organic vapor-phase epitaxy on single- and 8×4-in multiwafer reactors. Short-circuit current densities up to 10.9 mA/cm2 (AM0) have been achieved for a (GaIn)(NAs) cell filtered with GaAs. This excellent value is sufficient for the application in five- or six-junction photovoltaic cells. Challenges are resulting from the transfer of growth conditions to a production size multi-wafer MOVPE reactor, which are discussed in this paper." @default.
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- W1994886795 date "2004-12-01" @default.
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- W1994886795 title "Comparison of dilute nitride growth on a single- and 8×4-inch multiwafer MOVPE system for solar cell applications" @default.
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- W1994886795 doi "https://doi.org/10.1016/j.jcrysgro.2004.08.038" @default.
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