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- W1994947018 abstract "The DC performance of GaAs/AlAs heterojunction bipolar transistors (HBTs) grown on silicon substrates with buffer layers ranging from 0 to 5 mu m was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base diode ideality factors, and breakdown voltages were measured as the buffer layer thickness was varied between 0 and 5 mu m. The current gain steadily increases with increasing buffer layer thickness until the layer reaches 3 mu m. However, the other DC parameters are relatively insensitive to the buffer layer thickness. A small-signal current gain of 60 is typically achieved for devices with 6*6- mu m/sup 2/ emitters at a density of 6*10/sup 4/ A/cm/sup 2/ when the buffer layer is >or=3 mu m.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W1994947018 date "1988-12-01" @default.
- W1994947018 modified "2023-09-27" @default.
- W1994947018 title "Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates" @default.
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- W1994947018 doi "https://doi.org/10.1109/55.20427" @default.
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