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• W1994948767 abstract "The undoped GaN (u-GaN) and two-dimensional electron gas (2DEG) metal–semiconductor–metal (MSM) photodetectors with semi-transparent Ni/Au Schottky barrier contact electrodes were fabricated. It was found that we could achieve a larger Ni/Au transmittance, higher Schottky barrier heights and larger photocurrent to dark current contrast ratios by photo-chemical annealing of these photodetectors in O2. It was also found that the maximum quantum efficiencies were 13% and 57% for the photo-chemical annealing u-GaN and 2DEG photodetectors, respectively. Furthermore, it was found that we could achieve a larger responsivity, a lower noise level and a larger detectivity by using the 2DEG structure." @default.
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• W1994948767 date "2005-03-01" @default.
• W1994948767 modified "2023-10-17" @default.
• W1994948767 title "Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts" @default.
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• W1994948767 doi "https://doi.org/10.1016/j.sse.2004.11.017" @default.
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