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- W1994963375 abstract "The electrical resistivity, magnetic properties and structure of Co(Si, Al)(N, O) films, prepared by r.f. reactive magnetron sputtering with (Ar+O2 or N2) gases, have been studied. Transmission electron microscopy observation reveals that the films are composed of grains finer than 10 nm. A considerable amount of compositional deviation is observed between the grain and intergrain regions. The electrical resistivity of the films increases on increasing the O2 or N2 gas flow ratio in the sputtering gas, which is attributed to the nitriding or oxidizing of the intergrain region. The resistivity reaches anomalously high values 103–107 μΩ cm. The films with resistivity less than about 104 μΩ cm exhibit soft magnetic properties. Nitrided films exhibit a particularly good frequency response of their permeability. The loss terms are small, even in the high frequency region, and are approximately consistent with those calculated by the Landau-Lifshitz equation." @default.
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- W1994963375 date "1995-05-01" @default.
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- W1994963375 title "Co(N, O)-based granular thin films and their soft magnetic properties" @default.
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- W1994963375 doi "https://doi.org/10.1016/0925-8388(94)04911-4" @default.
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