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- W1994965209 abstract "Lead titanate thin films were prepared in-situ by RF magnetron sputtering method in the substrate temperature region of 550 °C ˜ 650 °C using Ti and Pb metal targets and oxygen gas. The films deposited at 650 °C for 60 min – when the applied power to the Ti and Pb target and deposition pressure were 200 W, 40 W, and 1.8 × 10−2 Torr, respectively — had stoichiometric composition ratio and shown X-ray diffraction patterns of tetragonal structure like that of the powder. For the application to the piezoelectric field effect transistor (PI-FET), the substrate of SiO2 (50 nm)/p-Si(100) was used. Leakage current density of the thin film was 7 × 10−8 A/cm2 at 100 kV/cm, dielectric breakdown voltage was 1.8 MV/cm, and so it showed high insulator characteristics. Capacitance-voltage curve was measured as a function of pressure. The variation width of the capacitance was 6.5 pF at bias voltage of –4 volts, and the value increased linearly according to the pressure up to about 6 kgf/cm2, and was saturated at the pressure of 8 kgf/cm2." @default.
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- W1994965209 date "1995-01-01" @default.
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- W1994965209 title "Pressure Dependence of C–V Curve for Ferroelectric PbTiO3 Thin Films Prepared by RF Multi-target Magnetron Sputtering" @default.
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- W1994965209 doi "https://doi.org/10.1002/crat.2170300627" @default.
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