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• W1995092334 abstract "Abstract In situ SiC-doped filamentary MgB 2 wires (with the diameter of 0.860 and 0.375 mm) with Cu stabilization separated by Ti barrier layers supported by outer SS sheath and annealed at 800 °C/0.5 h have been studied by combination of EDX analysis and ion beam selective etching. It was found that several Ti–Cu inter-metallic compounds were created by Cu–Ti interdiffusion and thus the barrier protection against Cu penetration into the superconducting filaments is limited. We showed an advantage of Ti use as the barrier material in our wires. Ti getters silicon out from the superconducting filament, what purges superconducting MgB 2 from Si and creates an additional Si-rich layer in inner part of Ti barrier which prevents Cu diffusion more effectively." @default.
• W1995092334 created "2016-06-24" @default.
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• W1995092334 date "2011-07-01" @default.
• W1995092334 modified "2023-09-26" @default.
• W1995092334 title "EDX and ion beam treatment studies of filamentary in situ MgB2 wires with Ti barrier" @default.
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• W1995092334 doi "https://doi.org/10.1016/j.jallcom.2011.05.049" @default.
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