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• W1995167099 abstract "We present large-area, vertically aligned GaN n-core and p-shell structures on silicon substrates. The GaN pillars were formed by inductively coupled plasma etching of lithographically patterned n-GaN epitaxial layer. Mg-doped p-GaN shells were formed using selective overgrowth by halide vapor phase epitaxy. The diameter of the cores ranged from 250 nm to 10 μm with varying pitch. The p-shells formed truncated hexagonal pyramids with {11¯01} side-facets. Room-temperature photoluminescence and Raman scattering measurements indicate strain-relaxation in the etched pillars and shells. Cross-sectional transmission electron microscopy revealed dislocation bending by 90° at the core-shell interface and reduction in their density in the shells." @default.
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• W1995167099 date "2012-12-10" @default.
• W1995167099 modified "2023-09-22" @default.
• W1995167099 title "Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth" @default.
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• W1995167099 doi "https://doi.org/10.1063/1.4769376" @default.
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