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• W1995232768 abstract "In this study, we would analyzed the solid state reaction between Sn2.5Ag solder bump and Cu/Ni under-bump-metallization (UBM). After 150°C thermal aging, we observed that the intermetallic compounds (IMCs) at chip side and interposer side both were Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> IMCs. It indicated that the solder did not react with Cu and the Cu layer was completed. As thermal aging time increased, the thickness of Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> IMCs and the Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn grain size increased. In addition, the dispersed Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn compound would aggregate to form plated Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn compound as the thermal aging time increased. The growth kinetics of Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> was volume diffusion (n=0.5) domination the diffusion process of Sn and Ni atoms. We calculated the Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> IMCs growth rate constant was 0.067 μm/hr <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>½</sup> at 150°C aging. As the aging time increased, the concentration of Ag in the remaining solder bumps also increased. When the concentration of Ag was over 3.5 wt.%, the probability of plate-like Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn compound appeared in the solder bumps would increased. We used the Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> IMCs growth rate constant to define the critical volume of Sn2.5Ag solder was 1621.0 μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sup> . If the volume of the Sn2.5Ag microbumps were below the critical volume, the concentration of Ag in the remaining solder would over 3.5 wt.%, and the plate-like Ag <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> Sn would appear in the remaining solder after 1000-hr thermal aging at 150°C." @default.
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• W1995232768 date "2010-10-01" @default.
• W1995232768 modified "2023-09-26" @default.
• W1995232768 title "Microstructure evolution in microbumps for 3D-IC packaging" @default.
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• W1995232768 doi "https://doi.org/10.1109/impact.2010.5699610" @default.
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