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- W1995320910 abstract "The photoluminescence yield of undoped semiconductors strongly depends on the excitation power and the intensity distribution. The literature does not address this problem in spite of the fact that quoted recombination lifetimes vary at least over an order of magnitude. A simple cylindrical model based on nonlinear recombination and ambipolar carrier diffusion serves to simulate the photoluminescence yield. The radiative and Auger recombination are responsible for the nonlinearity. Using the controlled Gaussian beam distribution of a He–Ne laser to excite the photoluminescence, we experimentally test the predictions of the calculations on a thin (100nm) GaAs layer embedded in AlxGa1−xAs. These observations demonstrate that the concept of a universal lifetime is not valid for undoped materials having residual impurity concentrations well below 1016cm−3. The lifetime concept also looses its physical significance in strongly pumped materials, where the injected carrier densities are comparable or larger than the background doping." @default.
- W1995320910 created "2016-06-24" @default.
- W1995320910 creator A5027079847 @default.
- W1995320910 date "2006-04-01" @default.
- W1995320910 modified "2023-10-16" @default.
- W1995320910 title "Excitation dependence of photoluminescence due to nonlinear recombination and diffusion" @default.
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- W1995320910 doi "https://doi.org/10.1063/1.2183407" @default.
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