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• W1995339969 endingPage "233" @default.
• W1995339969 startingPage "221" @default.
• W1995339969 abstract "Ion beam deposition of either elemental targets in a chemically active gas such as oxygen or nitrogen, or of the appropriate oxide or nitride target, usually with an additional amount of ambient oxygen or nitrogen present, is an effective means of depositing high quality oxide and nitride films. However, there are a number of phenomena that can occur, especially during the production of multicomponent films such as the ferroelectric perovskites or high temperature superconducting oxides, which make it desirable to monitor the composition and structure of the growing film in situ. These phenomena include thermodynamic (Gibbsian), and oxidation or nitridation-driven segregation, enhanced oxidation or nitridation through production of a highly reactive gas phase species such as atomic oxygen or ozone via interaction of the ion beam with the target, and changes in the film composition due to preferential sputtering of the substrate via primary ion backscattering and secondary sputtering of the film. Ion beam deposition provides a relatively low background pressure of the sputtering gas, but the ambient oxygen or nitrogen required to produce the desired phase, along with the gas burden produced by the ion source, result in a background pressure which is too high by several orders of magnitude to perform in situ surface analysis by conventional means. Similarly, diamond is normally grown in the presence of a hydrogen atmosphere to inhibit the formation of the graphitic phase. A surface analysis system incorporating pulsed beam ion scattering spectroscopy, direct recoil spectroscopy, and mass spectroscopy of recoiled ions (MSRI) with differentially pumped ion beam and detector lines has been integrated with a multi-target ion beam deposition system, permitting the characterization of the surface composition and structure of a thin film surface during growth at ambient pressures in the range of 10−8 bar . A number of phenomena are observed which are not amenable to study in systems which require cessation of film deposition in order to study surface properties. In addition, it has been found that the positive-to-negative ion ratio of the MSRI signal provides a unique ‘phase fingerprint’ which in a number of cases permits ready identification of the chemical phase of the growing film. Data will be presented showing representative applications in the area or multicomponent oxide film growth for which the in situ ion beam characterization methods described here provide a unique means for understanding thin film growth phenomena." @default.
• W1995339969 created "2016-06-24" @default.
• W1995339969 creator A5007188497 @default.
• W1995339969 creator A5032435203 @default.
• W1995339969 creator A5038261940 @default.
• W1995339969 creator A5054894148 @default.
• W1995339969 creator A5061964209 @default.
• W1995339969 creator A5069102517 @default.
• W1995339969 creator A5070887188 @default.
• W1995339969 creator A5082866674 @default.
• W1995339969 date "1998-09-01" @default.
• W1995339969 modified "2023-10-18" @default.
• W1995339969 title "Ion beam deposition and surface characterization of thin multi-component oxide films during growth" @default.
• W1995339969 cites W1984990932 @default.
• W1995339969 cites W2001489450 @default.
• W1995339969 cites W2016793240 @default.
• W1995339969 cites W2020684874 @default.
• W1995339969 cites W2021678748 @default.
• W1995339969 cites W2032328789 @default.
• W1995339969 cites W2036192365 @default.
• W1995339969 cites W2042418864 @default.
• W1995339969 cites W2044938017 @default.
• W1995339969 cites W2046319206 @default.
• W1995339969 cites W2047582812 @default.
• W1995339969 cites W2053772559 @default.
• W1995339969 cites W2055235442 @default.
• W1995339969 cites W2059021530 @default.
• W1995339969 cites W2063998246 @default.
• W1995339969 cites W2077365578 @default.
• W1995339969 cites W2079817126 @default.
• W1995339969 cites W2091197685 @default.
• W1995339969 cites W2131399158 @default.
• W1995339969 cites W2134604123 @default.
• W1995339969 cites W2138195486 @default.
• W1995339969 cites W2139773710 @default.
• W1995339969 cites W2166483251 @default.
• W1995339969 cites W2277491504 @default.
• W1995339969 cites W4232724466 @default.
• W1995339969 doi "https://doi.org/10.1016/s0921-5093(98)00730-8" @default.
• W1995339969 hasPublicationYear "1998" @default.
• W1995339969 type Work @default.
• W1995339969 sameAs 1995339969 @default.
• W1995339969 citedByCount "4" @default.
• W1995339969 crossrefType "journal-article" @default.
• W1995339969 hasAuthorship W1995339969A5007188497 @default.
• W1995339969 hasAuthorship W1995339969A5032435203 @default.
• W1995339969 hasAuthorship W1995339969A5038261940 @default.
• W1995339969 hasAuthorship W1995339969A5054894148 @default.
• W1995339969 hasAuthorship W1995339969A5061964209 @default.
• W1995339969 hasAuthorship W1995339969A5069102517 @default.
• W1995339969 hasAuthorship W1995339969A5070887188 @default.
• W1995339969 hasAuthorship W1995339969A5082866674 @default.
• W1995339969 hasConcept C113196181 @default.
• W1995339969 hasConcept C121332964 @default.
• W1995339969 hasConcept C145148216 @default.
• W1995339969 hasConcept C151730666 @default.
• W1995339969 hasConcept C171250308 @default.
• W1995339969 hasConcept C178790620 @default.
• W1995339969 hasConcept C185592680 @default.
• W1995339969 hasConcept C19067145 @default.
• W1995339969 hasConcept C191897082 @default.
• W1995339969 hasConcept C192562407 @default.
• W1995339969 hasConcept C194760766 @default.
• W1995339969 hasConcept C22423302 @default.
• W1995339969 hasConcept C2776523803 @default.
• W1995339969 hasConcept C2779227376 @default.
• W1995339969 hasConcept C2779851234 @default.
• W1995339969 hasConcept C2816523 @default.
• W1995339969 hasConcept C32891209 @default.
• W1995339969 hasConcept C43617362 @default.
• W1995339969 hasConcept C50774322 @default.
• W1995339969 hasConcept C62520636 @default.
• W1995339969 hasConcept C64297162 @default.
• W1995339969 hasConcept C77671233 @default.
• W1995339969 hasConcept C86803240 @default.
• W1995339969 hasConcept C93106096 @default.
• W1995339969 hasConceptScore W1995339969C113196181 @default.
• W1995339969 hasConceptScore W1995339969C121332964 @default.
• W1995339969 hasConceptScore W1995339969C145148216 @default.
• W1995339969 hasConceptScore W1995339969C151730666 @default.
• W1995339969 hasConceptScore W1995339969C171250308 @default.
• W1995339969 hasConceptScore W1995339969C178790620 @default.
• W1995339969 hasConceptScore W1995339969C185592680 @default.
• W1995339969 hasConceptScore W1995339969C19067145 @default.
• W1995339969 hasConceptScore W1995339969C191897082 @default.
• W1995339969 hasConceptScore W1995339969C192562407 @default.
• W1995339969 hasConceptScore W1995339969C194760766 @default.
• W1995339969 hasConceptScore W1995339969C22423302 @default.
• W1995339969 hasConceptScore W1995339969C2776523803 @default.
• W1995339969 hasConceptScore W1995339969C2779227376 @default.
• W1995339969 hasConceptScore W1995339969C2779851234 @default.
• W1995339969 hasConceptScore W1995339969C2816523 @default.
• W1995339969 hasConceptScore W1995339969C32891209 @default.
• W1995339969 hasConceptScore W1995339969C43617362 @default.
• W1995339969 hasConceptScore W1995339969C50774322 @default.
• W1995339969 hasConceptScore W1995339969C62520636 @default.
• W1995339969 hasConceptScore W1995339969C64297162 @default.
• W1995339969 hasConceptScore W1995339969C77671233 @default.

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