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• W1995341970 abstract "We discuss the wafer design and fabrication process for the 1.3-μm-wavelength AlGaInAs/InP transistor lasers, and the structural dependence of lasing and the electrical characteristics are shown. We particularly focus on the base structure, and the thickness and width dependence are numerically and experimentally analyzed. A thicker base layer resulted in lower optical confinement factor in the quantum wells (QWs), higher optical loss, and lower current gain. In addition, a wider base width caused leak current recombination outside the QWs. By modifying the structure of an n-p-n TL, it was possible to simultaneously realize room-temperature continuous-wave lasing and transistor operation." @default.
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• W1995341970 date "2013-07-01" @default.
• W1995341970 modified "2023-10-16" @default.
• W1995341970 title "Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-μm Wavelength" @default.
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• W1995341970 doi "https://doi.org/10.1109/jstqe.2013.2250490" @default.
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