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- W1995348671 abstract "A new etching method, synchrotron-radiation-excited etching of a silicon wafer enhanced with a disk-shaped sheet CF 4 plasma is proposed. The synchrotron radiation was incident perpendicularly on a silicon wafer which was placed on the downstream side of a CF 4 plasma, and exposed simultaneously to the disk-shaped CF 4 plasma. Etching of the silicon wafer was enhanced when the silicon wafer was kept at a negative bias voltage. The etch rate increased linearly with increasingly negative bias voltage up to the -300 V. Using the new etching method, a fine pattern of 0.125 μm lines has been successfully fabricated. The characteristics of the disk-shaped sheet CF 4 plasma used in the experiments were investigated in detail. The amount of species contributing to the etching process generated by the disk-shaped plasma can be controlled by adjusting the distance between the edge of the disk-shaped plasma and the silicon surface. The etching mechanism is discussed." @default.
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- W1995348671 date "1996-12-01" @default.
- W1995348671 modified "2023-09-26" @default.
- W1995348671 title "Synchrotron‐Radiation‐Excited Etching of Silicon Wafer Enhanced by Disk‐Shaped CF 4 Plasma" @default.
- W1995348671 doi "https://doi.org/10.1149/1.1837345" @default.
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