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• W1995351666 abstract "We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and <TEX>$P^+$</TEX>/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the <TEX>$P^+$</TEX>/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation." @default.
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• W1995351666 date "2011-03-25" @default.
• W1995351666 modified "2023-09-27" @default.
• W1995351666 title "Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology" @default.
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• W1995351666 doi "https://doi.org/10.3807/josk.2011.15.1.001" @default.
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