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• W1995467583 abstract "Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor–liquid–solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p–n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs." @default.
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• W1995467583 date "2013-12-23" @default.
• W1995467583 modified "2023-10-16" @default.
• W1995467583 title "GaN nanowire/thin film vertical structure p–n junction light-emitting diodes" @default.
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• W1995467583 doi "https://doi.org/10.1063/1.4860971" @default.
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