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- W1995491062 abstract "We present atomistic band structure calculations revealing a different mechanism than recently surmised via $mathbf{k}ifmmodecdotelsetextperiodcenteredfi{}mathbf{p}$ calculations about the evolution of the topological state (TS) in $mathrm{HgTe}/mathrm{CdTe}$. We show that 2D interface (not 1D edge) TSs are possible. We find that the transitions from a topological insulator at critical HgTe thickness of $n=23text{ }text{ }mathrm{ML}$ (62.5 AA{}) to a normal insulator at smaller $n$ is due to the crossing between two interface-localized states: one derived from the $S$-like ${ensuremath{Gamma}}_{6c}$ and one derived from the $P$-like ${ensuremath{Gamma}}_{8v}$ light hole, not because of the crossing of an interface state and an extended quantum well state. These atomistic calculations suggest that a 2D TS can exist in a 2D system, even without truncating its symmetry to 1D, thus explaining the otherwise surprising similarity between the 2D dispersion curves of the TS in $mathrm{HgTe}/mathrm{CdTe}$ with those of the TS in 3D bulk materials such as ${mathrm{Bi}}_{2}{mathrm{Se}}_{3}$." @default.
- W1995491062 created "2016-06-24" @default.
- W1995491062 creator A5007886751 @default.
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- W1995491062 date "2010-10-21" @default.
- W1995491062 modified "2023-10-03" @default.
- W1995491062 title "Design Principles and Coupling Mechanisms in the 2D Quantum Well Topological Insulator<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>HgTe</mml:mi><mml:mo>/</mml:mo><mml:mi>CdTe</mml:mi></mml:math>" @default.
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- W1995491062 doi "https://doi.org/10.1103/physrevlett.105.176805" @default.
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