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- W1995506502 abstract "Extended n-type layers have been produced in semi-insulating GaAs by the activation of Si implanted to atomic concentrations as low as 6×1016 cm−3. Active layers were obtained in two types of undoped (no intentional dopants introduced during the growth process) semi-insulating GaAs. These were bulk GaAs grown by the liquid encapsulated Czochralski method and epitaxial layers grown by chemical vapor deposition. Three terminal transferred-electron devices were fabricated in a completely planar geometry. Gunn domain triggering by the gate resulted in dc negative resistance current dropback between 20% and 40%. High-frequency negative resistance was observed in the 2–7 GHz range." @default.
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- W1995506502 date "1980-06-01" @default.
- W1995506502 modified "2023-09-26" @default.
- W1995506502 title "Gallium arsenide transferred‐electron devices by low‐level ion implantation" @default.
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- W1995506502 doi "https://doi.org/10.1063/1.328067" @default.
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