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• W1995608178 abstract "The combination of extreme electronic and thermal properties found in synthetic diamond produced by chemical vapor deposition (CVD) is raising considerable excitement over its potential use as a semiconductor material. Experimental studies have demonstrated charge-carrier mobilities1 of >3000 cm2V−1s−1 and thermal conductivities2 >2000 Wm−1K−1. The material has been predicted to have a breakdown field strength in excess of 10 MVcm−1. These figures suggest that, providing a range of technical challenges can be overcome, diamond would be particularly well suited to operation as a semiconductor material wherever high frequencies, high powers, high temperatures or high voltages are required." @default.
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• W1995608178 date "2008-01-01" @default.
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• W1995608178 title "Diamond as an electronic material" @default.
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• W1995608178 doi "https://doi.org/10.1016/s1369-7021(07)70349-8" @default.
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