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- W1995618499 abstract "Monomethylsilane (MMSi) is demonstrated as an alternative Si dopant precursor for silane. It is stable in the air and it is in gas phase at room temperature. Si-doped GaN films were grown by metalorganic vapor-phase epitaxy (MOVPE) using MMSi. The electron concentration was controlled linearly with the MMSi flow rate in the range 1 x 10{sup 18} cm{sup -3} to 2 x 10{sup 19} cm{sup -3}. Carbon contamination in the n-type GaN was measured by secondary ion mass spectroscopy (SIMS) and was lower than the detection limit of SIMS (1 x 10{sup 17} cm{sup -3}). The electron mobility was equal to or higher than those obtained from other reported dopant precursors for a given electron concentration. These results indicate that it is a suitable dopant precursor to obtain n-type GaN in high quality and a much safer MOVPE system can be established. (orig.) 6 refs." @default.
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- W1995618499 date "1998-02-01" @default.
- W1995618499 modified "2023-09-26" @default.
- W1995618499 title "Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE" @default.
- W1995618499 doi "https://doi.org/10.4028/www.scientific.net/msf.264-268.1141" @default.
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