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• W1995623261 endingPage "2880" @default.
• W1995623261 startingPage "2872" @default.
• W1995623261 abstract "Using electron-spin resonance (ESR), we demonstrate that several E′ variant precursors exist in a variety of technologically significant thermally grown thin SiO2 films on Si. The E′ variants include two varieties with the ubiquitous Eγ′ line shape (zero-crossing g=2.0005, O3≡Si⋅) and a second very narrow line shape (zero-crossing g=2.0019, structure unknown). We tentatively label the g=2.0019 defect EP for provisional E′ and distinguish the Eγ′ variants Eγn′ (neutral) and Eγp′ (positive). We combine ESR, capacitance versus voltage electrical measurements, and charge injection sequences to compare the electronic properties of the defects. We find that paramagnetic EP defects are positively charged while paramagnetic Eγ′ centers can be either positively charged or, under some circumstances, neutral. We find that EP precursors have a very large capture cross section for holes (σ=10−13 cm2) and that paramagnetic EP defects have an even larger capture cross section for electrons (σ=10−12 cm2). Both EP capture cross sections are an order of magnitude greater than those of the Eγp′ defects. We find that EP centers are distributed much more broadly throughout the oxide than either the Eγp′ or Eγn′ defects. We also find a two order of magnitude variation in EP density dependent upon processing variations. In addition, EP centers, unlike the Eγ′ variations, are not stable at room temperature. With their large capture cross section for holes and even larger capture cross section for electrons, EP defects may be relevant to device reliability and charge trapping under conditions of a low, relatively pure hole fluence such as in hot hole injection in short n-channel metal-oxide-semiconductor field-effect transistors." @default.
• W1995623261 created "2016-06-24" @default.
• W1995623261 creator A5011597387 @default.
• W1995623261 creator A5023754364 @default.
• W1995623261 creator A5046500471 @default.
• W1995623261 creator A5068975006 @default.
• W1995623261 creator A5086607600 @default.
• W1995623261 date "1994-09-01" @default.
• W1995623261 modified "2023-10-12" @default.
• W1995623261 title "Observation and electronic characterization of ‘‘new’’<i>E</i>′ center defects in technologically relevant thermal SiO₂on Si: An additional complexity in oxide charge trapping" @default.
• W1995623261 cites W1967453410 @default.
• W1995623261 cites W1974786196 @default.
• W1995623261 cites W1977182953 @default.
• W1995623261 cites W1977435322 @default.
• W1995623261 cites W1977556797 @default.
• W1995623261 cites W1982211089 @default.
• W1995623261 cites W1982394999 @default.
• W1995623261 cites W1984261436 @default.
• W1995623261 cites W1990227248 @default.
• W1995623261 cites W1994466230 @default.
• W1995623261 cites W2010324505 @default.
• W1995623261 cites W2024762520 @default.
• W1995623261 cites W2029707735 @default.
• W1995623261 cites W2035202768 @default.
• W1995623261 cites W2041660178 @default.
• W1995623261 cites W2051127965 @default.
• W1995623261 cites W2054025853 @default.
• W1995623261 cites W2060636550 @default.
• W1995623261 cites W2061495278 @default.
• W1995623261 cites W2062503576 @default.
• W1995623261 cites W2062755121 @default.
• W1995623261 cites W2063483846 @default.
• W1995623261 cites W2064133776 @default.
• W1995623261 cites W2071991571 @default.
• W1995623261 cites W2108261428 @default.
• W1995623261 cites W2129367594 @default.
• W1995623261 cites W2140898368 @default.
• W1995623261 cites W2160203601 @default.
• W1995623261 cites W2166224963 @default.
• W1995623261 doi "https://doi.org/10.1063/1.358428" @default.
• W1995623261 hasPublicationYear "1994" @default.
• W1995623261 type Work @default.
• W1995623261 sameAs 1995623261 @default.
• W1995623261 citedByCount "85" @default.
• W1995623261 countsByYear W19956232612012 @default.
• W1995623261 countsByYear W19956232612013 @default.
• W1995623261 countsByYear W19956232612014 @default.
• W1995623261 countsByYear W19956232612015 @default.
• W1995623261 countsByYear W19956232612016 @default.
• W1995623261 countsByYear W19956232612019 @default.
• W1995623261 countsByYear W19956232612020 @default.
• W1995623261 countsByYear W19956232612022 @default.
• W1995623261 countsByYear W19956232612023 @default.
• W1995623261 crossrefType "journal-article" @default.
• W1995623261 hasAuthorship W1995623261A5011597387 @default.
• W1995623261 hasAuthorship W1995623261A5023754364 @default.
• W1995623261 hasAuthorship W1995623261A5046500471 @default.
• W1995623261 hasAuthorship W1995623261A5068975006 @default.
• W1995623261 hasAuthorship W1995623261A5086607600 @default.
• W1995623261 hasConcept C105066094 @default.
• W1995623261 hasConcept C121332964 @default.
• W1995623261 hasConcept C124712363 @default.
• W1995623261 hasConcept C147120987 @default.
• W1995623261 hasConcept C164675345 @default.
• W1995623261 hasConcept C184779094 @default.
• W1995623261 hasConcept C185544564 @default.
• W1995623261 hasConcept C185592680 @default.
• W1995623261 hasConcept C187961010 @default.
• W1995623261 hasConcept C188082385 @default.
• W1995623261 hasConcept C18903297 @default.
• W1995623261 hasConcept C191897082 @default.
• W1995623261 hasConcept C192562407 @default.
• W1995623261 hasConcept C26873012 @default.
• W1995623261 hasConcept C2777924906 @default.
• W1995623261 hasConcept C2779851234 @default.
• W1995623261 hasConcept C41999313 @default.
• W1995623261 hasConcept C46141821 @default.
• W1995623261 hasConcept C62520636 @default.
• W1995623261 hasConcept C86803240 @default.
• W1995623261 hasConceptScore W1995623261C105066094 @default.
• W1995623261 hasConceptScore W1995623261C121332964 @default.
• W1995623261 hasConceptScore W1995623261C124712363 @default.
• W1995623261 hasConceptScore W1995623261C147120987 @default.
• W1995623261 hasConceptScore W1995623261C164675345 @default.
• W1995623261 hasConceptScore W1995623261C184779094 @default.
• W1995623261 hasConceptScore W1995623261C185544564 @default.
• W1995623261 hasConceptScore W1995623261C185592680 @default.
• W1995623261 hasConceptScore W1995623261C187961010 @default.
• W1995623261 hasConceptScore W1995623261C188082385 @default.
• W1995623261 hasConceptScore W1995623261C18903297 @default.
• W1995623261 hasConceptScore W1995623261C191897082 @default.
• W1995623261 hasConceptScore W1995623261C192562407 @default.
• W1995623261 hasConceptScore W1995623261C26873012 @default.
• W1995623261 hasConceptScore W1995623261C2777924906 @default.
• W1995623261 hasConceptScore W1995623261C2779851234 @default.
• W1995623261 hasConceptScore W1995623261C41999313 @default.
• W1995623261 hasConceptScore W1995623261C46141821 @default.
• W1995623261 hasConceptScore W1995623261C62520636 @default.

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