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• W1995623886 abstract "Transmission electron microscopy and the cathodoluminescence method have been used to study the transition region in 3C–SiC/6H–SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C–SiC and 6H–SiC layers, with possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the spinodal decomposition model. • Interface of 3C–SiC/6H–SiC heterostructures is composed of thin layers of both polytypes. • Such structure can be understood in terms of the spinodal decomposition model. • Such structure can be used for fabricating SiC supperlattice." @default.
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• W1995623886 date "2014-06-01" @default.
• W1995623886 modified "2023-09-26" @default.
• W1995623886 title "A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures" @default.
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• W1995623886 doi "https://doi.org/10.1016/j.jcrysgro.2014.03.030" @default.
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