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• W1995669849 abstract "β-SiC on SiO2 multilayer structures have been fabricated by ion implantation into Si substrates and thermal bonding. This process involves three steps: (i) multiple C implant into Si, to obtain a buried β-SiC layer with sharp interfaces with the top Si and substrate regions, (ii) selective oxidation of the top Si layer, and (iii) bonding and etch-back of Si. These are processes compatible with Si technology, and allow to obtain high crystalline quality β-SiC films on SiO2 without using expensive bulk SiC or silicon-on-insulator (SIO) wafers. The structures have been characterised after the different process steps mainly by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM) measurements. The analysis of samples processed after the different steps has allowed to define the key parameters for fabricating high quality structures for electronic devices and sensors applications." @default.
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• W1995669849 date "1999-04-01" @default.
• W1995669849 modified "2023-10-18" @default.
• W1995669849 title "β-SiC on SiO2 formed by ion implantation and bonding for micromechanics applications" @default.
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• W1995669849 doi "https://doi.org/10.1016/s0924-4247(98)00311-2" @default.
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