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• W1995687408 abstract "ZnO thin films have been grown heteroepitaxially on epi-GaN/sapphire (0001) substrates. Rutherford backscattering spectroscopy, ion channeling, and high resolution transmission electron microscopy studies revealed high-quality epitaxial growth of ZnO on GaN with an atomically sharp interface. The x-ray diffraction and ion channeling measurements indicate near perfect alignment of the ZnO epilayers on GaN as compared to those grown directly on sapphire (0001). Low-temperature cathodoluminescence studies also indicate high optical quality of these films presumably due to the close lattice match and stacking order between ZnO and GaN. Lattice-matched epitaxy and good luminescence properties of ZnO/GaN heterostructures are thus promising for ultraviolet lasers. These heterostructures demonstrate the feasibility of integrating hybrid ZnO/GaN optoelectronic devices." @default.
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• W1995687408 date "1998-07-20" @default.
• W1995687408 modified "2023-10-17" @default.
• W1995687408 title "Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices" @default.
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• W1995687408 doi "https://doi.org/10.1063/1.121830" @default.
• W1995687408 hasPublicationYear "1998" @default.
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