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- W1995726552 abstract "Mesoporous silica films have been prepared by a vapor phase method using tetraethoxysilane (TEOS) in a batch reactor and in a continuous flow reactor. The TEOS molecules penetrated into a triblock copolymer films and then a triblock copolymer/silica composite structure was formed. A two dimensional grazing-incidence small angle X-ray scattering pattern and field emission scanning electron microscopy images of the films indicated that the films possess ordered and disordered regions. The tortuous pore channels in the wormhole-like disordered structure run parallel to the film surface. The mesostructured triblock copolymer/silica composite films were treated with a trimethylethoxysilane (TMES) vapor before and after calcination. The vapor infiltration treatments effectively improved mechanical strength and hydrothermal stability of the films. The dielectric constant of the TMES-treated mesoporous silica films was reduced into the 1.5–1.7 range." @default.
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- W1995726552 date "2008-06-01" @default.
- W1995726552 modified "2023-10-18" @default.
- W1995726552 title "Disordered mesoporous silica low-k thin films prepared by vapor deposition into a triblock copolymer template film" @default.
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- W1995726552 doi "https://doi.org/10.1016/j.tsf.2007.08.124" @default.
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