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• W1995784946 abstract "A vacuum growth technique was employed for the first time to grow thin films of the ternary chalcopyrite semiconductor ZnSnP2. Nearstoichiometric layers were grown on GaAs, quartz and molybdenum substrates. The quality of layers grown on GaAs substrates was superior to that of layers grown on quartz substrates. All the films examined were of p-type conductivity. Indium was used to form an ohmic contact to the grown films. The more conductive samples on semi-insulating GaAs had dark resistivity values at room temperature in the range 0.2 – 10 Ω cm. Only a small decrease in these resistivity values was observed at 77 K. The Hall measurements on the above samples showed carrier concentrations in the range (1 – 10) × 1017 cm−3 at room temperature and carrier mobility values in the range 35 – 47 cm2 V−1 s−1. Heterostructure diodes fabricated from the grown films on n-type GaAs showed a small photoresponse, demonstrating the feasibility of photovoltaic applications of the grown material." @default.
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• W1995784946 date "1987-06-01" @default.
• W1995784946 modified "2023-09-25" @default.
• W1995784946 title "Vacuum growth of thin films of ZnSnP2" @default.
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• W1995784946 doi "https://doi.org/10.1016/0379-6787(87)90128-1" @default.
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