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- W1995876985 abstract "As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to ensure that the shrinkage is done painstakingly to avoid unwanted leakage problems. This paper reports the discovery of two new failure mechanisms, short poly end-cap and silicon dislocation, that are found to cause subtle source drain leakage in sub-micron CMOS product. The electrical characteristics of the failure and the special techniques that are employed to fault isolate the problem are also discussed in this paper." @default.
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- W1995876985 date "1996-09-12" @default.
- W1995876985 modified "2023-09-23" @default.
- W1995876985 title "<title>Source drain leakage: a potential problem in submicron CMOS devices</title>" @default.
- W1995876985 doi "https://doi.org/10.1117/12.250831" @default.
- W1995876985 hasPublicationYear "1996" @default.
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