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• W1995954913 abstract "Scanning Tunneling Microscopy and Spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films. The STM images reveal a rather smooth surface, which appears to have been formed due to the coalescence of islands with different shapes. The spectroscopic data, in general, exhibit characteristics typical of metal-insulator-semiconductor structures, with a heavily doped semiconductor. From the I-V curves, a band gap of ≈3.5 eV is obtained, which is very close to the bulk value. The I-V studies at some grain boundary interfaces suggest the presence of regions showing electronic characteristics, that differ significantly from what is observed on the rest of the film surface." @default.
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• W1995954913 date "1997-03-01" @default.
• W1995954913 modified "2023-10-16" @default.
• W1995954913 title "Observation of deviation of electronic behaviour of indium tin oxide film at grain boundary using Scanning Tunneling Microscope" @default.
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• W1995954913 doi "https://doi.org/10.1016/s0038-1098(96)00684-9" @default.
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