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- W1995980462 abstract "Abstract The growth of heteroepitaxial III–V compounds on dielectric oxide substrates has been most successfully and reproducibly achieved by the organometallic growth process developed in recent years. The epitaxial film growth characteristics are largely affected by several key parameters including the substrate orientation, substrate surface preparation, growth temperature, gas flow and source material purity. The heteroepitaxial films have been characterized by X-ray diffraction topography and found to be composed of characteristic grain structures which are misoriented ±0.1° from the nominal orientation of the layer. The film/substrate composites are deformed, and the films are generally under compressive stress of the order of 109 dyn cm-2. Electrical properties of the heteroepitaxial films are inferior to the bulk material properties, but are favorable enough for applications in several devices with potential advantages." @default.
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- W1995980462 title "Crystal growth and defect characterization of heteroepitaxial III–V semiconductor films" @default.
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- W1995980462 doi "https://doi.org/10.1016/0040-6090(76)90351-5" @default.
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