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- W1995984003 abstract "High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented." @default.
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- W1995984003 date "1981-01-15" @default.
- W1995984003 modified "2023-10-16" @default.
- W1995984003 title "Slip dislocation formation during cw laser annealing of silicon" @default.
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- W1995984003 doi "https://doi.org/10.1063/1.92268" @default.
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