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- W1996043045 abstract "We propose a measurement system for photoinduced minority carrier absorption of 9.35 GHz microwaves using periodically pulsed light illumination at 620 nm. The ratio of average carrier density when light illumination is ON to that when light illumination is OFF, P , was theoretically analyzed for different light pulse widths. The analysis of P resulted in a formula giving the minority carrier lifetime τ eff of silicon under continuous light illumination. τ eff for holes was experimentally determined using the formula, and its spatial distribution was obtained to be from 1.0 ×10 -3 to 1.28 ×10 -3 s for n-type silicon substrates with a thickness of 520 µm coated with 100-nm-thick thermally grown SiO 2 layers. We also demonstrated that τ eff depended on the means of light illumination for a defective sample. Two different τ eff values were obtained, 7 ×10 -5 and 1.73 ×10 -4 s, in the cases of light illumination to the top surface and rear surface, respectively, when the SiO 2 layer was etched up to 2 nm at the top surface." @default.
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- W1996043045 date "2011-03-01" @default.
- W1996043045 modified "2023-10-18" @default.
- W1996043045 title "Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method" @default.
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- W1996043045 doi "https://doi.org/10.1143/jjap.50.03ca02" @default.
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