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• W1996043210 abstract "p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance." @default.
• W1996043210 created "2016-06-24" @default.
• W1996043210 creator A5035218738 @default.
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• W1996043210 date "2013-11-25" @default.
• W1996043210 modified "2023-10-17" @default.
• W1996043210 title "Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors" @default.
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• W1996043210 doi "https://doi.org/10.1063/1.4833541" @default.
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