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- W1996090610 abstract "Recently, the spontaneous switching-on of numerous current filaments in a silicon n++−p+−n−p−−p+ structure with large junction area has been reported and classified as a phenimenon of self-organization. We suggest an analytical approach for the underlying nonlinear current feedback mechanism that is connected with the specific multilayer topology of the structure. It is shown that double injection processes with a quite atypical plasma-field stratification occur along the anode-to-cathode direction. A regenerative feedback between the electron and hole currents regulated by injection storage and non-linear tunnel or diffusion leakage current is proved to be responsible for the local switching properties of the device. The theory and calculations based on device parameters explain well the important features of the measured current-voltage characteristic and some additional dependencies." @default.
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- W1996090610 date "1996-12-01" @default.
- W1996090610 modified "2023-10-16" @default.
- W1996090610 title "Analytical model for a nonlinear current feedback mechanism in a self-organizing semiconductor system" @default.
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- W1996090610 doi "https://doi.org/10.1016/s0167-2789(96)00153-4" @default.
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