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• W1996131307 endingPage "1902" @default.
• W1996131307 startingPage "1898" @default.
• W1996131307 abstract "In this Letter, bilayered Cu2O/CuO thin films were grown on Nb doped SrTiO3 (Nb:STO) substrates by plasma assisted molecular beam epitaxy. The current–voltage characteristics of Pt/Cu2O/CuO/Nb:STO devices show reproducible and pronounced current–voltage hysteresis which was induced by the CuO/Nb:STO junctions. By comparing the current–voltage curves of the bilayered and single-layered CuO thin films, we attribute the prominent switching behavior to the oxygen-vacancies-mediated-carriers-trapped-detrapped process with the aid of the applied forward (reversed) bias voltage." @default.
• W1996131307 created "2016-06-24" @default.
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• W1996131307 date "2011-05-01" @default.
• W1996131307 modified "2023-09-25" @default.
• W1996131307 title "Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films" @default.
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• W1996131307 doi "https://doi.org/10.1016/j.physleta.2011.03.033" @default.
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