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- W1996192012 abstract "An X-ray scattering study is presented of the orientational phase diagram of Si surfaces misoriented by up to 5.2° from the cubic [113] direction towards [111], and for temperatures between 300 and 1500 K. At the highest temperatures (above 1200 K), the surface is uniformly stepped. In this region, the intensity of near-specularly scattered X-rays increases with decreasing temperature, suggesting a corresponding increase in the surface roughness as a result of a direct attractive interaction between steps. For temperatures below a tricritical point of T′t = 1200 K, there occurs a two-phase region in which (113) facets appear in coexistence with stepped phase regions. For temperatures below a triple point at T′3 = 1180 K, coexistence between (113) facets and (55 12) facets is found. These results pertain to the sample heating current directed towards [332̄]. For heating currents directed in the opposite direction, there occurs an electric-field-induced instability, which has a significant effect on the high-temperature morphology." @default.
- W1996192012 created "2016-06-24" @default.
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- W1996192012 creator A5012204048 @default.
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- W1996192012 date "1995-07-01" @default.
- W1996192012 modified "2023-10-04" @default.
- W1996192012 title "Faceting, tricriticality, and attractive interactions between steps in the orientational phase diagram of silicon surfaces between [113] and [55 12]" @default.
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- W1996192012 doi "https://doi.org/10.1016/0039-6028(95)00491-2" @default.
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