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• W1996205649 abstract "Niobium–aluminate (NbAlO) thin films have been prepared on silicon (100) with different Nb2O5:Al2O3 growth cycle ratio by atomic layer deposition (ALD) technology. The structural, chemical and optical properties of NbAlO thin films are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). The results show that all the obtained NbAlO films are amorphous and fully oxidized. It is also found that the proportion of components in the NbAlO film can be well-controlled by varying the ALD growth cycles of the independent oxides. Furthermore, the refraction index of the prepared films is observed to increase with an increase of the concentration of Nb in the mixtures." @default.
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• W1996205649 date "2011-07-01" @default.
• W1996205649 modified "2023-09-23" @default.
• W1996205649 title "Characterizations of NbAlO thin films grown by atomic layer deposition" @default.
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• W1996205649 doi "https://doi.org/10.1016/j.matlet.2011.04.067" @default.
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