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- W1996321611 abstract "An integration scheme for realizing strained n-channel metal-oxide-semiconductor field-effect transistors (nFETS) with embedded silicon–carbon source/drain (S/D) stressors formed in close proximity to the channel was demonstrated. The stressors are termed channel-proximate (CP) Si:C S/D stressors, whose proximity to the channel improves their effectiveness in contributing to tensile strain in the channel region. Numerical simulation was performed using the finite-element method to assess the strain enhancement due to CP Si:C S/D. Key process development and material characterization were performed to understand the interaction between dopants and substitutional carbon concentration . Unstrained control nFETs, nFETs with conventional Si:C S/D formed after spacers, and nFETs with CP Si:C S/D were fabricated. The nFET with CP Si:C S/D stressors achieved a drive current enhancement of and over unstrained nFET and nFET with conventional Si:C S/D, respectively. The impact of channel orientation on enhancement was also investigated." @default.
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- W1996321611 date "2010-01-01" @default.
- W1996321611 modified "2023-10-05" @default.
- W1996321611 title "Strained n-Channel Field-Effect Transistors with Channel Proximate Silicon–Carbon Source/Drain Stressors for Performance Enhancement" @default.
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