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• W1996366761 abstract "The interfacial characteristics and band alignments of high-k ZrO2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, and hysteresis. It is also found that Si IPL can reduce interfacial GaAs-oxide formation and increases effective valence-band offset at ZrO2∕p-GaAs interface. The effective valence-band offsets of ZrO2∕p-GaAs and ZrO2∕Si∕p-GaAs interfaces are determined to be 2.7 and 2.84eV, while the effective conduction-band offsets are found to be 1.67 and 1.53eV, respectively." @default.
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• W1996366761 date "2007-12-10" @default.
• W1996366761 modified "2023-10-06" @default.
• W1996366761 title "Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate" @default.
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• W1996366761 doi "https://doi.org/10.1063/1.2822422" @default.
• W1996366761 hasPublicationYear "2007" @default.
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