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• W1996383412 endingPage "497" @default.
• W1996383412 startingPage "492" @default.
• W1996383412 abstract "Silicon nitride films were prepared at room temperature using the double-tubed coaxial line-type microwave plasma chemical vapor deposition system. The dependence of film composition and properties on the flow rate of SiH4 gas and on the partial pressure of N2 gas in the deposition chamber has been investigated. A new simple method was suggested and employed to determine the film composition from the refractive index and nitrogen concentration. The flow rate of SiH4 gas was varied between 1 and 10 ml/min. The flow rate of N2 gas was at 50 ml/min and the partial pressures of N2 gas in the deposition chamber were set at 0.015 and 0.0036 Torr by changing the size of the substrate table. With an increasing flow rate of SiH4 gas, the following effects upon the films were obtained: proportional increases in the deposition rate, shifts to lower energy of the absorption edge, decreases in the film density, and decreases in the concentration of N and the N–H bond. Increases in the refractive index, the Si/N ratio, and the concentrations of Si and the Si–H bond were also observed. In the case of low partial pressure of N2 gas, the deposition rate decreases, the absorption edge shifts to higher energy, the N concentration increases, and the films become denser. The optical properties of the film vary slowly with the flow rate of SiH4, and these properties can be determined more precisely by varying the flow rate of SiH4." @default.
• W1996383412 created "2016-06-24" @default.
• W1996383412 creator A5024645859 @default.
• W1996383412 creator A5053734115 @default.
• W1996383412 creator A5056257029 @default.
• W1996383412 date "1987-07-15" @default.
• W1996383412 modified "2023-09-27" @default.
• W1996383412 title "Preparation of silicon nitride films at room temperature using double-tubed coaxial line-type microwave plasma chemical vapor deposition system" @default.
• W1996383412 cites W1995334627 @default.
• W1996383412 cites W1997050264 @default.
• W1996383412 cites W2002128003 @default.
• W1996383412 cites W2015029701 @default.
• W1996383412 cites W2025450084 @default.
• W1996383412 cites W2026672338 @default.
• W1996383412 cites W2028117260 @default.
• W1996383412 cites W2048049771 @default.
• W1996383412 cites W2083976024 @default.
• W1996383412 cites W2094899951 @default.
• W1996383412 cites W2526698561 @default.
• W1996383412 doi "https://doi.org/10.1063/1.339772" @default.
• W1996383412 hasPublicationYear "1987" @default.
• W1996383412 type Work @default.
• W1996383412 sameAs 1996383412 @default.
• W1996383412 citedByCount "26" @default.
• W1996383412 countsByYear W19963834122015 @default.
• W1996383412 crossrefType "journal-article" @default.
• W1996383412 hasAuthorship W1996383412A5024645859 @default.
• W1996383412 hasAuthorship W1996383412A5053734115 @default.
• W1996383412 hasAuthorship W1996383412A5056257029 @default.
• W1996383412 hasConcept C111368507 @default.
• W1996383412 hasConcept C113196181 @default.
• W1996383412 hasConcept C121332964 @default.
• W1996383412 hasConcept C125287762 @default.
• W1996383412 hasConcept C127313418 @default.
• W1996383412 hasConcept C151730666 @default.
• W1996383412 hasConcept C159985019 @default.
• W1996383412 hasConcept C171250308 @default.
• W1996383412 hasConcept C172120300 @default.
• W1996383412 hasConcept C178790620 @default.
• W1996383412 hasConcept C185592680 @default.
• W1996383412 hasConcept C19067145 @default.
• W1996383412 hasConcept C192562407 @default.
• W1996383412 hasConcept C2777289219 @default.
• W1996383412 hasConcept C2777431650 @default.
• W1996383412 hasConcept C2816523 @default.
• W1996383412 hasConcept C38347018 @default.
• W1996383412 hasConcept C42067758 @default.
• W1996383412 hasConcept C49040817 @default.
• W1996383412 hasConcept C540031477 @default.
• W1996383412 hasConcept C544956773 @default.
• W1996383412 hasConcept C57410435 @default.
• W1996383412 hasConcept C62520636 @default.
• W1996383412 hasConcept C64297162 @default.
• W1996383412 hasConcept C68463220 @default.
• W1996383412 hasConcept C86803240 @default.
• W1996383412 hasConceptScore W1996383412C111368507 @default.
• W1996383412 hasConceptScore W1996383412C113196181 @default.
• W1996383412 hasConceptScore W1996383412C121332964 @default.
• W1996383412 hasConceptScore W1996383412C125287762 @default.
• W1996383412 hasConceptScore W1996383412C127313418 @default.
• W1996383412 hasConceptScore W1996383412C151730666 @default.
• W1996383412 hasConceptScore W1996383412C159985019 @default.
• W1996383412 hasConceptScore W1996383412C171250308 @default.
• W1996383412 hasConceptScore W1996383412C172120300 @default.
• W1996383412 hasConceptScore W1996383412C178790620 @default.
• W1996383412 hasConceptScore W1996383412C185592680 @default.
• W1996383412 hasConceptScore W1996383412C19067145 @default.
• W1996383412 hasConceptScore W1996383412C192562407 @default.
• W1996383412 hasConceptScore W1996383412C2777289219 @default.
• W1996383412 hasConceptScore W1996383412C2777431650 @default.
• W1996383412 hasConceptScore W1996383412C2816523 @default.
• W1996383412 hasConceptScore W1996383412C38347018 @default.
• W1996383412 hasConceptScore W1996383412C42067758 @default.
• W1996383412 hasConceptScore W1996383412C49040817 @default.
• W1996383412 hasConceptScore W1996383412C540031477 @default.
• W1996383412 hasConceptScore W1996383412C544956773 @default.
• W1996383412 hasConceptScore W1996383412C57410435 @default.
• W1996383412 hasConceptScore W1996383412C62520636 @default.
• W1996383412 hasConceptScore W1996383412C64297162 @default.
• W1996383412 hasConceptScore W1996383412C68463220 @default.
• W1996383412 hasConceptScore W1996383412C86803240 @default.
• W1996383412 hasIssue "2" @default.
• W1996383412 hasLocation W19963834121 @default.
• W1996383412 hasOpenAccess W1996383412 @default.
• W1996383412 hasPrimaryLocation W19963834121 @default.
• W1996383412 hasRelatedWork W1990546030 @default.
• W1996383412 hasRelatedWork W1996383412 @default.
• W1996383412 hasRelatedWork W2016430896 @default.
• W1996383412 hasRelatedWork W2047901069 @default.
• W1996383412 hasRelatedWork W2371191966 @default.
• W1996383412 hasRelatedWork W2374834462 @default.
• W1996383412 hasRelatedWork W2375548594 @default.
• W1996383412 hasRelatedWork W2379688728 @default.
• W1996383412 hasRelatedWork W3144697431 @default.
• W1996383412 hasRelatedWork W2152946510 @default.
• W1996383412 hasVolume "62" @default.
• W1996383412 isParatext "false" @default.
• W1996383412 isRetracted "false" @default.

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